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Vishay Intertechnology Electronic Components Datasheet

Si5480DU Datasheet

N-Channel 30-V (D-S) MOSFET

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Si5480DU pdf
N-Channel 30-V (D-S) MOSFET
Si5480DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.016 at VGS = 10 V
0.022 at VGS = 4.5 V
PowerPAK ChipFET Single
ID (A)a
12
12
Qg (Typ.)
11 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
APPLICATIONS
• Load Switch, PA Switch, and Battery Switch
for Portable Applications
• DC-DC Synchronous Rectification
Marking Code
AD XXX
Lot Traceability
and Date Code
G
D
Part # Code
Bottom View
S
Ordering Information: Si5480DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
IS
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
12a
12a
10.7b, c
8.6b, c
30
12a
2.6b, c
31
20
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
34
3
40
°C/W
4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si5480DU Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si5480DU pdf
Si5480DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 1 mA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 7.2 A
VGS = 4.5 V, ID = 6.1 A
VDS = 15 V, ID = 7.2 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10.7 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10.7 A
f = 1 MHz
VDD = 15 V, RL = 1.7 Ω
ID 8.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.7 Ω
ID 8.6 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 8.6 A, VGS = 0 V
IF = 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1
30
Typ. Max. Unit
33
- 6.2
0.013
0.018
23
V
mV/°C
3
± 100
1
10
0.016
0.022
V
ns
µA
A
Ω
S
1230
210
115
22.5
11
4.4
3.7
5.9
100
140
35
15
10
10
40
8
0.85
20
15
13
7
34
17
150
210
55
25
15
15
60
15
12
30
1.2
40
30
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73585
S-81448-Rev. B, 23-Jun-08


Part Number Si5480DU
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay
Total Page 7 Pages
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