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Vishay Intertechnology Electronic Components Datasheet

Si6443DQ Datasheet

P-Channel 30-V (D-S) MOSFET

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Si6443DQ pdf
P-Channel 30-V (D-S) MOSFET
Si6443DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.012 at VGS = - 10 V
0.019 at VGS = - 4.5 V
ID (A)
- 8.8
- 7.0
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
APPLICATIONS
• Battery Switch
• Load Switch
RoHS
COMPLIANT
S*
TSSOP-8
D1
S2
S3
G4
Si6443DQ
8D
7S
6S
5D
Top View
Ordering Information: Si6443DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 8.8
- 7.2
- 7.3
- 5.9
Pulsed Drain Current (10 µs Pulse Width)
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.35
- 0.95
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.50 1.05
1.0 0.67
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
60
100
35
Maximum
83
120
45
Unit
°C/W
Document Number: 72083
S-80682-Rev. B, 31-Mar-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si6443DQ Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si6443DQ pdf
Si6443DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 8.8 A
VGS = - 4.5 V, ID = - 7.2 A
Forward Transconductancea
gfs VDS = - 15 V, ID = - 8.8 A
Diode Forward Voltagea
VSD IS = - 1.5 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 15 V, VGS = - 5 V, ID = - 8.8 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 1.5 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
-1 -3
± 100
-1
- 10
- 20
0.0095 0.012
0.0145 0.019
30
- 0.71 - 1.1
Unit
V
nA
µA
A
Ω
S
V
38 60
9.3
17.7
25 40
21 35
115 180
68 110
65 100
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 thru 4 V
24
30
24
18 18
12 3 V
6
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
12
6
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.5
www.vishay.com
2
Document Number: 72083
S-80682-Rev. B, 31-Mar-08


Part Number Si6443DQ
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay
Total Page 6 Pages
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