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Vishay Intertechnology Electronic Components Datasheet

SiHP18N50C Datasheet

Power MOSFET

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SiHP18N50C pdf
Power MOSFET
SiHP18N50C
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560
VGS = 10 V
76
21
29
Single
TO-220AB
0.225
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved trr/Qrr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SiHP18N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentb
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
TO-220AB
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyc
Maximum Power Dissipation
Peak Diode Recovery dV/dtd
TO-220AB
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A.
d. ISD 18 A, dI/dt 380 A/μs, VDD VDS, TJ 150 °C.
e. 1.6 mm from case.
LIMIT
500
± 30
18
11
72
1.8
361
223
5
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHP18N50C Datasheet

Power MOSFET

No Preview Available !

SiHP18N50C pdf
SiHP18N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
TO-220
Maximum Junction-to-Case (Drain)
TO-220
SYMBOL
RthJA
RthJC
TYP.
-
-
MAX.
62
0.56
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 10 A
VDS = 50 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
f = 1.0 MHz, open drain
VGS = 10 V
ID = 18 A, VDS = 400 V
VDD = 250 V, ID = 18 A
Rg = 7.5 , VGS = 10 V
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
ISM p - n junction diode
D
G
S
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 18 A, VGS = 0 V
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, VR = 35 V
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
MIN. TYP. MAX. UNIT
500 -
-V
- 0.6 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 25
μA
- - 250
- 0.225 0.270
- 6.4 - S
- 2451 2942
- 300 360 pF
- 26 32
- 1.1 -
- 65 76
- 21 - nC
- 29 -
- 80 -
- 27 -
ns
- 32 -
- 44 -
- - 18
A
- - 72
- - 1.5 V
- 503 - ns
- 6.7 - μC
- 30 - A
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
www.vishay.com
2
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHP18N50C
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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