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Vishay Intertechnology Electronic Components Datasheet

VS-STPS1045B-M3 Datasheet

Schottky Rectifier

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VS-STPS1045B-M3 pdf
VS-STPS1045B-M3
Vishay Semiconductors
Schottky Rectifier, 10 A
Base
cathode
4, 2
D-PAK (TO-252AA)
1
Anode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D-PAK (TO-252AA)
10 A
45 V
0.57 V
15 mA at 125 °C
175 °C
Single die
20 mJ
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• Popular D-PAK outline
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-STPS1045B-M3 surface mount Schottky
rectifier has been designed for applications requiring low
forward drop and small foot prints on PC board. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 10 Apk, TJ = 125 °C
TJ Range
VALUES
10
45
390
0.57
- 40 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-STPS1045B-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 151 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
10
390
75
20
3.0
UNITS
A
mJ
A
Document Number: 93327 For technical questions within your region, please contact one of the following:
Revision: 03-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

VS-STPS1045B-M3 Datasheet

Schottky Rectifier

No Preview Available !

VS-STPS1045B-M3 pdf
VS-STPS1045B-M3
Vishay Semiconductors
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
VALUES
10 A
20 A
TJ = 25 °C
0.63
0.84
10 A
20 A
TJ = 125 °C
0.57
0.72
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
0.2
15
760
5.0
Rated VR
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES UNITS
- 40 to 175 °C
3.0
°C/W
50
0.3 g
0.01 oz.
STPS1045B
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93327
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 03-Nov-10


Part Number VS-STPS1045B-M3
Description Schottky Rectifier
Maker Vishay
Total Page 7 Pages
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