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Vishay Intertechnology Electronic Components Datasheet

VS-VSKH162-08PBF Datasheet

Thyristor/Diode and Thyristor/Thyristor

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VS-VSKH162-08PBF pdf
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
New INT-A-PAK
PRODUCT SUMMARY
IT(AV)
Type
135 A to 160 A
Modules - Thyristor, Standard
Package
INT-A-PAK
Circuit
Two SCRs doubler circuit, SCR/diode
doubler circuit, positive control,
SCR/diode doubler circuit, negative
control
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.136..
IT(AV)
IT(RMS)
ITSM
85 °C
50 Hz
60 Hz
135
300
3200
3360
50 Hz
I2t
60 Hz
51.5
47
I2t 515.5
VRRM
TJ
Range
Range
400 to 1600
VSK.142..
140
310
4500
4712
102
92.5
1013
400 to 1600
-40 to 125
VSK.162..
160
355
4870
5100
119
108
1190
400 to 1600
UNITS
A
A
kA2s
kA2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VS-VSK.136
VS-VSK.142
VS-VSK.162
04
08
12
14
16
VRRM/VDRM, MAXIMUM REPETITIVE VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
VV
400 500
800 900
1200
1300
1400
1500
1600
1700
IRRM/IDRM
AT 125 °C
mA
50
Revision: 11-Apr-14
1 Document Number: 94513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-VSKH162-08PBF Datasheet

Thyristor/Diode and Thyristor/Thyristor

No Preview Available !

VS-VSKH162-08PBF pdf
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
VFM
IH
Maximum latching current
IL
TEST CONDITIONS
VSK.136 VSK.142 VSK.162
180° conduction, half sine wave
135 140 160
85 85 85
As AC switch
300 310 355
t = 10 ms No voltage
t = 8.3 ms reapplied
3200
3360
4500
4712
4870
5100
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
2700
2800
51.5
47
3785
3963
102
92.5
4100
4300
119
108
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
36.5 71.6
84
33.3 65.4 76.7
t = 0.1 ms to 10 ms, no voltage reapplied
515.5 1013 1190
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
0.86
1.05
0.83
1
0.8
0.98
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 2.02
1.78
1.67
(I > x IT(AV)), TJ maximum
ITM = x IT(AV), TJ = 25 °C, 180° conduction
ITM = x IT(AV), TJ = 25 °C, 180° conduction
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
Anode supply = 6 V resistive load = 1 
Gate pulse: 10 V, 100 μs, TJ = 25 °C
1.65
1.57
1.57
1.43
1.55
1.55
200
400
1.38
1.54
1.54
UNITS
A
°C
A
kA2s
kA2s
V
m
V
V
mA
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
tgd
tgr
tq
TEST CONDITIONS
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100
VALUES
1
2
50 to 200
UNITS
μs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of
off-state voltage
SYMBOL
IRRM,
IDRM
VINS
dV/dt
TEST CONDITIONS
TJ = 125 °C
50 Hz, circuit to base,
all terminals shorted, t = 1 s
TJ = TJ maximum,
exponential to 67 % rated VDRM
VALUES
50
3500
1000
UNITS
mA
V
V/μs
Revision: 11-Apr-14
2 Document Number: 94513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-VSKH162-08PBF
Description Thyristor/Diode and Thyristor/Thyristor
Maker Vishay
Total Page 14 Pages
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