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Vishay Intertechnology Electronic Components Datasheet

VS-VSKT230-14PBF Datasheet

SCR/SCR and SCR/Diode

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VS-VSKT230-14PBF pdf
www.vishay.com
VS-VSK.230..PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 230 A
MAGN-A-PAK
PRODUCT SUMMARY
IT(AV)
Type
Package
Circuit
230 A
Modules - Thyristor, Standard
MAGN-A-PAK
Two SCRs doubler circuit
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
IT(RMS)
ITSM
85 °C
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
VDRM/VRRM
TJ
Range
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE
TYPE NUMBER
CODE
VS-VSK.230-
08
12
16
18
20
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
800
1200
1600
1800
2000
VALUES
230
510
7500
7850
280
260
280
800 to 2000
-40 to 130
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1300
1700
1900
2100
UNITS
A
kA2s
kA2s
V
°C
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
50
Revision: 17-Jul-14
1 Document Number: 93053
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-VSKT230-14PBF Datasheet

SCR/SCR and SCR/Diode

No Preview Available !

VS-VSKT230-14PBF pdf
www.vishay.com
VS-VSK.230..PbF Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle on-state
non-repetitive, surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
No voltage
t = 8.3 ms
reapplied
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
Sinusoidal
half wave,
t = 10 ms
No voltage
initial
t = 8.3 ms
reapplied
TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
ITM = π x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 μs, TJ = 25 °C
VALUES
230
85
510
7500
7850
6300
6600
280
256
198
181
2800
1.03
1.07
0.77
0.73
1.59
500
1000
UNITS
A
°C
A
kA2s
kA2s
V
mΩ
V
mA
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
td
tr
tq
TEST CONDITIONS
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
Vd = 0.67 % VDRM
ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
VALUES
1.0
2.0
50 to 150
UNITS
μs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
IRRM,
IDRM
VINS
dV/dt
TEST CONDITIONS
TJ = TJ maximum
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
TJ = TJ maximum, exponential to 67 % rated VDRM
VALUES
50
3000
1000
UNITS
mA
V
V/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+ IGM
- VGT
Maximum required DC gate voltage to trigger VGT
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
Maximum rate of rise of turned-on current
IGT
VGD
IGD
dI/dt
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
tp 5 ms, TJ = TJ maximum
tp 5 ms, TJ = TJ maximum
TJ = - 40 °C
TJ = 25 °C
TJ = TJ maximum
Anode supply = 12 V,
resistive load; Ra = 1 Ω
TJ = - 40 °C
TJ = 25 °C
TJ = TJ maximum
Anode supply = 12 V,
resistive load; Ra = 1 Ω
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, ITM = 400 A, rated VDRM applied
VALUES
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
10.0
500
UNITS
W
A
V
mA
V
mA
A/μs
Revision: 17-Jul-14
2 Document Number: 93053
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-VSKT230-14PBF
Description SCR/SCR and SCR/Diode
Maker Vishay
Total Page 9 Pages
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