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Vishay Intertechnology Electronic Components Datasheet

VSB2200S Datasheet

High-Voltage Trench MOS Barrier Schottky Rectifier

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VSB2200S pdf
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VSB2200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 2.0 A
TJ max.
2.0 A
200 V
40 A
0.65 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB2200S
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) (1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
200
2.0
40
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
10 000
- 40 to + 150
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
UNIT
V
A
A
V/µs
°C
Document Number: 89142 For technical questions within your region, please contact one of the following:
Revision: 29-Sep-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

VSB2200S Datasheet

High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

VSB2200S pdf
www.DataSheet.co.kr
New Product
VSB2200S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage (1)
Reverse current per diode (2)
Typical juntion capacitance
IR = 1.0 mA
IF = 2.0 A
VR = 200 V
4.0 V, 1 MHz
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR 200 (minimum)
VF
0.97
0.65
IR
0.8
0.6
CJ 110
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
1.23
0.73
40
4
-
UNIT
V
µA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB2200S
Typical thermal resistance (1)
RθJA
RθJL
88
20
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB2200S-M3/54
0.34
54
VSB2200S-M3/73
0.34
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.4
2.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
1.6
1.2
0.8
0.4
0
0 25 50 75 100 125 150 175
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1.8
D = 0.8
1.6 D = 0.3 D = 0.5
1.4 D = 0.2
1.2 D = 0.1
D = 1.0
1.0
0.8
0.6 T
0.4
0.2
0
0
D = tp/T
tp
0.4 0.8 1.2 1.6 2.0
Average Forward Current (A)
2.4
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89142
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 29-Sep-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number VSB2200S
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 4 Pages
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