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Vishay Intertechnology Electronic Components Datasheet

BA892V-04W Datasheet

Band Switching Diodes

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BA892V-04W
Vishay Semiconductors
Band Switching Diodes - Dual, Series in SOT-323
Description
The main purpose of the BA892V-04W is the Band
Switching. Biased with a DC forward current for sig-
nals at frequencies over 100 MHz up to 3 GHz this
diode behaves like a current controlled resistor and
not as a diode any more.
Depending on the forward current the forward resis-
tance rf can be switched far below 1 , so that the
Switch is closed.
To open the Switch, the BA892V-04W has to be
driven in the reverse mode where the BA892V-04W
behaves like a small capacitor with high isolation.
So typical applications for this Band Switching Diode
are mobile and TV-applications.
Features
• Low forward resistance
• Small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
e3
2
1
3
12
3 18379
Applications
Band switching up to 3 GHz
Low loss band-switching in TV/VTR tuners
Mechanical Data
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/box
Parts Table
Part
BA892V-04W
Ordering code
BA892V-04W-GS08
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage
Test condition
Forward current
Junction temperature
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
AW4
Marking
Remarks
Tape and Reel
Symbol
VR
IF
Tj
Tstg
Value
35
100
150
-55 to +150
Unit
V
mA
°C
°C
Symbol
RthJS
Value
100
Unit
K/W
Document Number 85649
Rev. 1.2, 24-Jun-05
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

BA892V-04W Datasheet

Band Switching Diodes

No Preview Available !

BA892V-04W pdf
BA892V-04W
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
IR = 10 µA
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
Diode capacitance
f = 1 MHz, VR = 0
f = 1 MHz, VR = 1 V
f = 1 MHz, VR = 3 V
Forward resistance
f = 100 MHz, IF = 1 mA
f = 100 MHz, IF = 3 mA
f = 100 MHz, IF = 10 mA
Charge carrier life time
IF = 10 mA, IR = 6 mA, iR = 3 mA
Symbol
VR
IR
VF
CD
CD
CD
rf
rf
rf
trr
Min
35
Typ.
1.1
0.9
0.85
0.6
0.45
0.34
90
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Max
20
1.1
1.2
1.1
0.7
0.5
Unit
V
nA
V
pF
pF
pF
ns
IF - Forward Current (mA)
Figure 1. Forward Resistance vs. Forward Current
100.00
10.00
1.00
0.10
0.01
0.5
18324
0.6 0.7 0.8 0.9
VF - Forward Voltage ( V )
1.0
Figure 3. Forward Current vs. Forward Voltage
1.2
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0.0
0
18332
4 8 12 16 20 24 28
VR - Reverse V oltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
70
60
50
40
30
20
10
18328
0
0.01
0.1 1.0 10 100 1000
IR - Reverse Current ( µA )
Figure 4. Reverse Voltage vs. Reverse Current
www.vishay.com
2
Document Number 85649
Rev. 1.2, 24-Jun-05


Part Number BA892V-04W
Description Band Switching Diodes
Maker Vishay Siliconix
Total Page 5 Pages
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BA892V-04W pdf
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