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Vishay Intertechnology Electronic Components Datasheet

H11B3 Datasheet

(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

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H11B3 pdf
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, With Base
Connection
Features
• Isolation test voltage, 5300 VRMS
• Coupling capacitance, 0.5 pF
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
i179005
A1
C2
NC 3
6B
5C
4E
e3 Pb
Pb-free
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The H11B1/ H11B2/ H11B3 are industry standard
optocouplers, consisting of a gallium arsenide infra-
red LED and a silicon photodarlington.
Order Information
Part
H11B1
H11B2
H11B3
H11B1-X007
H11B1-X009
H11B2-X009
Remarks
CTR > 500 %, DIP-6
CTR > 200 %, DIP-6
CTR > 100 %, DIP-6
CTR > 500 %, SMD-6 (option 7)
CTR > 500 %, SMD-6 (option 9)
CTR > 200 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
VR
IF
Pdiss
Value
3.0
60
100
1.33
Unit
V
mA
mW
mW/°C
Output
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
Test condition
Symbol
BVCEO
BVECO
BVCBO
Value
25
7.0
30
Unit
V
V
V
Document Number 83609
Rev. 1.5, 26-Oct-04
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

H11B3 Datasheet

(H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection

No Preview Available !

H11B3 pdf
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Parameter
Collector current (continuous)
Power dissipation
Derate linearly from 25 °C
Test condition
Coupler
Parameter
Isolation test voltage
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Total package dissipation (LED
plus detector)
Derate linearly from 25 °C
Storage temperature
Test condition
between emitter and detector,
refer to standard climate
23 °C/50 %RH, DIN 50014
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Operating temperature
Lead soldering time at 260 °C
Symbol
IC
Pdiss
Symbol
VISO
RIO
RIO
Ptot
Tstg
Tamb
Value
100
150
2.0
Value
5300
7.0
7.0
175
1012
1011
260
3.5
- 55 to + 150
- 55 to + 100
10
Unit
mA
mW
mW/°C
Unit
VRMS
mm
mm
mW
mW/°C
°C
°C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reserve current
Junction capacitance
Test condition
IF = 50 mA
IF = 10 mA
VR = 3.0 V
VF = 0 V, f = 1.0 mHz
Part Symbol Min Typ. Max Unit
H11B1
VF
1.1 1.5
V
H11B2
VF
1.1 1.5
V
H11B3
VF
1.1 1.5
V
IR 10 µA
Cj 50 pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-base breakdown
voltage
Collector-emitter leakage
current
Test condition
IC = 1.0 mA, IF = 0 mA
IE = 100 µA, IF = 0 mA
IC = 100 µA, IF = 0 mA
VCE = 10 V, IF = 0 mA
Symbol
Min
Typ.
Max
Unit
BVCEO
30
V
BVECO
7.0
V
BVCBO
30
V
ICEO
100 nA
www.vishay.com
2
Document Number 83609
Rev. 1.5, 26-Oct-04


Part Number H11B3
Description (H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection
Maker Vishay Siliconix
Total Page 7 Pages
PDF Download
H11B3 pdf
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