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Vishay Intertechnology Electronic Components Datasheet

IRFR9014 Datasheet

Power MOSFET

No Preview Available !

IRFR9014 pdf
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
VGS = - 10 V
Qg (Max.) (nC)
12
Qgs (nC)
Qgd (nC)
3.8
5.1
Configuration
Single
0.50
S
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9014, SiHFR9014)
• Straight Lead (IRFU9014, SiHFU9014)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR9014-GE3
IRFR9014PbF
SiHFR9014-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9014TRL-GE3a
IRFR9014TRLPbFa
SiHFR9014TL-E3a
DPAK (TO-252)
SiHFR9014TR-GE3a
IRFR9014TRPbFa
SiHFR9014T-E3a
IPAK (TO-251)
SiHFU9014-GE3
IRFU9014PbF
SiHFU9014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 6.3 mH, Rg = 25 , IAS = - 5.1 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 60
± 20
- 5.1
- 3.2
- 20
0.20
0.020
140
- 5.1
2.5
25
2.5
- 4.5
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0168-Rev. D, 04-Feb-13
1
Document Number: 91277
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFR9014 Datasheet

Power MOSFET

No Preview Available !

IRFR9014 pdf
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
5.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 3.1 Ab
VDS = - 25 V, ID = - 3.1 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13b
VDD = - 30 V, ID = - 6.7 A,
Rg = 24 , RD = 4.0 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contactc
D
G
S
MIN.
- 60
-
- 2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX.
-
- 0.059
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.50
-
270 -
170 -
31 -
- 12
- 3.8
- 5.1
11 -
63 -
9.6 -
31 -
4.5 -
7.5 -
UNIT
V
V/°C
V
nA
μA
S
pF
nC
ns
nH
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - - 5.1
A
- - - 20
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 5.1 A, VGS = 0 Vb
-
-
- 5.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
- 80 160 ns
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μsb - 0.096 0.19 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S13-0168-Rev. D, 04-Feb-13
2
Document Number: 91277
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFR9014
Description Power MOSFET
Maker Vishay Siliconix
Total Page 11 Pages
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