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Vishay Intertechnology Electronic Components Datasheet

SI1405DL Datasheet

P-Channel 1.8-V (G-S) MOSFET

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SI1405DL pdf
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P-Channel 1.8-V (G-S) MOSFET
Si1405DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.125 @ VGS = –4.5 V
–8 0.160 @ VGS = –2.5 V
0.210 @ VGS = –1.8 V
ID (A)
"1.8
"1.6
"1.4
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
OB XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
–8
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
"1.8
"1.6
"1.5
"1.2
"5
–0.8
–0.8
0.625
0.568
0.400
0.295
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71073
S-01560—Rev. B, 17-Jul-00
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
165
180
105
Maximum
200
220
130
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI1405DL Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

SI1405DL pdf
Si1405DL
www.DaVtaSisheheta4Uy.coSm iliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –6.4 V, VGS = 0 V
VDS = –6.4 V, VGS = 0 V, TJ = 85_C
VDS = –5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –1.8 A
VGS = –2.5 V, ID = –1.6 A
VGS = –1.8 V, ID = –0.8 A
VDS = –10 V, ID = –1.8 A
IS = –0.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –4 V, VGS = –4.5 V, ID = –1.8 A
VDD = –4 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –0.8 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.45
–2
0.100
0.130
0.170
3.8
–0.76
"100
–1
–5
0.125
0.160
0.210
–1.1
V
nA
mA
A
W
S
V
5.5 7.0
0.9 nC
0.9
8 12
36 55
33 50 ns
30 45
20 40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
5
VGS = 5 thru 2 V
4
3
1.5 V
2
1
0.5 V
1V
0
01234
VDS – Drain-to-Source Voltage (V)
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5
4.0
3.2
2.4
1.6
0.8
0
0
Transfer Characteristics
TC = –55_C
25_C
125_C
0.6 1.2 1.8
VGS – Gate-to-Source Voltage (V)
2.4
Document Number: 71073
S-01560—Rev. B, 17-Jul-00


Part Number SI1405DL
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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