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SI3467DV Datasheet

P-Channel 20-V (D-S) MOSFET

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SI3467DV pdf
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Si3467DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.054 @ VGS = 10 V
20
0.094 @ VGS = 4.5 V
ID (A)
5.0
3.8
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
PC
Game Machine
TSOP-6
Top View
16
3 mm
25
34
Marking Code:
7Cxxx
2.85 mm
Ordering Information: Si3467DV-T1—E3 (lLead Free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
5.0
3.8
3.9
3.0
25
1.7
0.95
2.0 1.14
1.3 0.73
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72658
S-40238—Rev. B, 16-Feb-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3467DV Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

SI3467DV pdf
www.DataSheet.co.kr
Si3467DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS v 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 1.1 A
VDS = 15 V, ID = 5 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 10 V, ID = 5.0 A
f = 1 MHz
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
25
3
"100
1
5
0.042
0.073
10
0.8
0.054
0.094
1.2
V
nA
mA
A
W
S
V
8.7 13
1.7 nC
2.5
9W
10 15
15 25
22 35 ns
18 30
20 40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25
VGS = 10 thru 6 V
5V
20
15
4V
10
5
0
0
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2
3V
1234
VDS Drain-to-Source Voltage (V)
5
25
20
15
10
5
0
0
Transfer Characteristics
TC = 55_C
25_C
125_C
12345
VGS Gate-to-Source Voltage (V)
6
Document Number: 72658
S-40238—Rev. B, 16-Feb-04
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3467DV
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 6 Pages
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