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Vishay Intertechnology Electronic Components Datasheet

SI3911DV Datasheet

Dual P-Channel 20-V (D-S) MOSFET

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SI3911DV pdf
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Si3911DV
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.145 @ VGS = –4.5 V
–20 0.200 @ VGS = –2.5 V
0.300 @ VGS = –1.8 V
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
2.85 mm
D1
S1
D2
ID (A)
–2.2
–1.8
–1.5
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
–20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
–2.2
–1.8
–1.8
–1.5
"8
–1.05
–0.75
1.15
0.83
0.73
0.53
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
93
130
90
Maximum
110
150
90
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3911DV Datasheet

Dual P-Channel 20-V (D-S) MOSFET

No Preview Available !

SI3911DV pdf
Si3911DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 2.2 A
VGS = 2.5 V, ID = 1.8 A
VGS = 1.8 V, ID = 1.0 A
VDS = 5 V, ID = 2.2 A
IS = 1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 10 V, VGS = 4.5 V, ID = 2.2 A
VDD = 4 V, RL = 8 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.05 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.45
5
0.115
0.163
0.240
5
0.8
"100
1
10
0.145
0.200
0.300
1.1
V
nA
mA
A
W
S
V
5 7.5
1 nC
0.9
12 20
29 50
24 45 ns
30 50
20 40
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
VGS = 4.5 thru 2.5 V
6
4 2V
2
1.5 V
0
0
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2
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
10
TC = 55_C
8
25_C
6
125_C
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS Gate-to-Source Voltage (V)
Document Number: 71380
S-20275Rev. B, 18-Mar-02


Part Number SI3911DV
Description Dual P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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