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Vishay Intertechnology Electronic Components Datasheet

SI9410DY Datasheet

N-Channel 30-V (D-S) MOSFET

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SI9410DY pdf
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N-Channel 30-V (D-S) MOSFET
Si9410DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.030 @ VGS = 10 V
30 0.040 @ VGS = 5 V
0.050 @ VGS = 4.5 V
ID (A)
7.0
6.0
5.4
N/C 1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si9410DY
Si9410DY-T1 (with Tape and Reel)
DDD D
G
SS
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
7.0
5.8
30
2.8
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70122
S-31060—Rev. M, 26-May-03
Limit
50
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI9410DY Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

SI9410DY pdf
Si9410DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID =7.0 A
VGS = 5 V, ID = 4.0 A
VGS = 4.5 V, ID = 3.5 A
VDS = 15 V, ID = 7.0 A
IS = 2 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 15 V, VGS = 10 V, ID = 7 A
VDD = 25 V, RL = 25 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2 A, di/dt = 100 A/ms
Min Typa Max Unit
1.0 V
"100
nA
2
mA
25
30 A
0.024
0.030
0.030
0.032
0.040
0.050
W
15 S
0.72
1.1
V
24 50
2.8 nC
4.6
14 30
10 60
46 150 ns
17 140
60
www.vishay.com
2
Document Number: 70122
S-31060—Rev. M, 26-May-03


Part Number SI9410DY
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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