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Vishay Intertechnology Electronic Components Datasheet

SIE810DF Datasheet

N-Channel 20-V (D-S) MOSFET

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SIE810DF pdf
SPICE Device Model SiE810DF
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0-V to 4.5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 74188
S-60992Rev. A, 12-Jun-06
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SIE810DF Datasheet

N-Channel 20-V (D-S) MOSFET

No Preview Available !

SIE810DF pdf
SPICE Device Model SiE810DF
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
VDS = VGS, ID = 250 µA
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 25 A
VGS = 2.5 V, ID = 25 A
VDS = 10 V, ID = 25 A
IS = 10 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10V, VGS = 10 V, ID = 20 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 20 A
Qgd
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
1.1
1490
0.0013
0.0021
202
0.84
0.0013
0.0022
163
0.90
13430
1774
803
190
91
21
19
13000
1600
1000
200
90
21
19
Unit
V
A
S
V
pF
nC
www.vishay.com
2
Document Number: 74188
S-60992Rev. A, 12-Jun-06


Part Number SIE810DF
Description N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 3 Pages
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