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SUD06N10-225L-GE3 Datasheet

N-Channel 100V (D-S) MOSFET

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SUD06N10-225L-GE3 pdf
SUD06N10-225L-GE3
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
0.200 at VGS = 10 V
0.225 at VGS = 4.5 V
ID (A)
6.5
6
TO-252
Qg (Typ)
2.7
FEATURES
• TrenchFET® Power MOSFETs
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
G DS
Top View
Drain Connected to Tab
Order Number:
SUD06N10-225L-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)b
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAR
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAR
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
100
± 20
6.5
2.9
8
6.5
5
1.25
16.7b
1.25a
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
40
80
6
Maximum
50
100
7.5
Unit
°C/W
Document Number: 62831
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0193-Rev. A, 28-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SUD06N10-225L-GE3 Datasheet

N-Channel 100V (D-S) MOSFET

No Preview Available !

SUD06N10-225L-GE3 pdf
SUD06N10-225L-GE3
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 125 °C
VDS =5 V, VGS = 10 V
VGS = 10 V, ID = 3 A
VGS = 10 V, ID = 3 A, TJ = 125 °C
VGS = 4.5 V, ID = 1 A
VDS = 15 V, ID = 3 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, F = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 50 V, VGS = 5 V, ID = 6.5 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 50 V, RL = 7.5
ID 6.5 A, VGEN = 10 V, Rg = 2.5
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD IF = 6.5 A, VGS = 0 V
Source-Drain Reverse Recovery Time
trr
IF = 6.5 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Min.
100
1
8
Typ.a
Max.
3
± 100
1
50
0.160
0.180
8.5
0.200
0.350
0.225
240
42
17
2.7 4
0.6
0.7
7 11
8 12
8 12
9 14
8
0.9 1.3
35 60
Unit.
V
nA
µA
A
S
pF
nC
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62831
2 S13-0193-Rev. A, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SUD06N10-225L-GE3
Description N-Channel 100V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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