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TN0200K Datasheet

Specification Comparison TN0200K vs. TN0200T

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TN0200K pdf
Specification Comparison
Vishay Siliconix
TN0200K vs. TN0200T
Description: N-Channel MOSFET
Package: SOT-23
Pin Out:
Identical
Part Number Replacements:
TN0200K-T1 Replaces TN0200T-T1
TN0200K-T1—E3 (Lead Free version) Replaces TN0200T-T1
Summary of Performance:
The TN0200K is a technological upgrade with ESD protection for the original TN0200T. The ESD protection diodes on the
gate increase Gate-Body Leakage; otherwise both parts perform identically including limits to the parametric tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0200K
TN0200T
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA = 25_C
See Note
Pulsed Drain Current
Power Dissipation
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
VDS
VGS
ID
IDM
PD
Tj and Tstg
RthJA
20
"8
0.73
0.58
4
0.35
0.22
55 to 150
357
20
"8
0.73
0.58
4
0.35
0.22
55 to 150
357
V
A
W
_C
_C/W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
TN0200K
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 4.5 V
VGS = 2.5 V
VGS = 4.5 V
VGS = 2.5 V
Symbol
V(BR)DSS
VG(th)
IGSS
IDSS
ID(on)
rDs(on)
gfs
VSD
Qg
Qgs
Qgd
Min
20
0.45
2.5
1.5
Typ
0.6
0.2
0.25
2.2
0.8
1400
190
300
Max
1.0
"5000
1
0.4
0.5
1.2
2000
Switching
Turn-On Time
Turn-Off Time
NS denotes parameter not specified.
td(on)
tr
td(off)
tf
17 25
20 30
55 85
30 45
TN0200T
Min Typ Max
Unit
20
0.5
0.9
1.5
V
"100
nA
1 mA
2.5
1.5 A
0.29
0.34
0.4
0.5
W
2.2 S
0.8 1.2 V
1900
50
750
2800
pC
nC
8 13
14
21
21
30
ns
7 11
Document Number: 73004
19-May-04
www.vishay.com
1


Part Number TN0200K
Description Specification Comparison TN0200K vs. TN0200T
Maker Vishay Siliconix
Total Page 1 Pages
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