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Vishay Intertechnology Electronic Components Datasheet

TN0200TS Datasheet

N-Channel 20-V (D-S) MOSFETs

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TN0200TS pdf
N-Channel 20-V (D-S) MOSFETs
TN0200T/TS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.4 @ VGS = 4.5 V
0.5 @ VGS = 2.5 V
ID (A)
TN0200T TN0200TS
0.73
0.65
1.2
1.1
FEATURES
D Low On-Resistance: 0.29 W
D Low Threshold: 0.9 V (typ)
D 2.5-V or Lower Operation
D Fast Switching Speed: 22 ns
D Low Input and Output
Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Low Battery Voltage
Operation
APPLICATIONS
D Direct Logic-Level Interfact: TTL/CMOS
D Dirvers: Relays, Solenoids, Lamps, Hammers
D Battery Operated Systems, DC/DC Converters
D Solid-State Relays
D Load/Power SwitchingCell Phones, Pagers
TO-236
(SOT-23)
G1
S2
Top View
3D
Marking Code:
TN0200T: NOwll
TN0200TS: NSwll
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0200T TN0200TSc
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 20
"8 "8
0.73
1.2
0.58
1.0
44
0.6 1.0
0.35
1.0
0.22
0.65
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 10 sec.
c. Copper lead frame.
Document Number: 70202
S-40277—Rev. F, 23-Feb-04
Symbol
RthJA
TN0200T
357
TN0200TSc Unit
125 _C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

TN0200TS Datasheet

N-Channel 20-V (D-S) MOSFETs

No Preview Available !

TN0200TS pdf
TN0200T/TS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 50 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
TJ = 85_C
VDS w 5 V, VGS = 4.5 V
VDS w 5 V, VGS = 2.5 V
VGS = 4.5 V, ID = 0.6 A
VGS = 2.5 V, ID = 0.6 A
VDS = 5 V, ID = 0.6 A
IS = 0.6 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 0.6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, RL = 16 W
ID ^ 0.6 A, VGEN = 4.5 V, RG = 6 W
Limits
Min Typ Max
Unit
20 36
0.5 0.9
1.5
V
"100
nA
0.1
2 mA
2.5
A
1.5
0.29
0.34
0.4
0.5
W
2.2 S
0.8 1.2
V
1900
50
750
90
45
12
2800
pC
pF
8 13
14 21
ns
21 30
7 11
VNLJ02
www.vishay.com
2
Document Number: 70202
S-40277—Rev. F, 23-Feb-04


Part Number TN0200TS
Description N-Channel 20-V (D-S) MOSFETs
Maker Vishay Siliconix
Total Page 4 Pages
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