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Vishay Intertechnology Electronic Components Datasheet

TN0205AD Datasheet

N-Channel 20-V MOSFET

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TN0205AD pdf
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N-Channel 20-V MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
2.0 @ VGS = 4.5 V
2.5 @ VGS = 2.5 V
ID (mA)
250
150
TN0205A/AD
Vishay Siliconix
FEATURES
D Low On-Resistance: 2.0
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 35 ns
D 2.5-V or Lower Operation
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
D Battery operated Systems
D Solid State Relay
D Load/Power Switching-Cell Phones, PDA
SOT-323
SC-70 (3-Leads)
G1
S2
3D
Order Number:
TN0205A
SOT-363
SC-70 (6-Leads)
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Order Number:
TN0205AD
Marking Code:
TN0205A: Bl
TN0205AD: Dwl
w = Week Code
l = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0205A
TN0205AD
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
PD
TJ, Tstg
0.15
0.10
250
200
500
0.20 (Total)
0.13 (Total)
–55 to 150
Unit
V
mA
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
Symbol
RthJA
TN0205A
833
TN0205AD
625 (Total)
Unit
_C/W
www.vishay.com
11-1


Vishay Intertechnology Electronic Components Datasheet

TN0205AD Datasheet

N-Channel 20-V MOSFET

No Preview Available !

TN0205AD pdf
TN0205A/AD
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, ID = 10 mA
VDS = VGS, ID = 50 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS = 5.0 V, VGS = 2.5 V
VDS = 8.0 V, VGS = 4.5 V
VGS = 2.5 V, ID = 150 mA
VGS = 4.5 V, ID = 250 mA
VDS = 2.5 V, ID = 50 mA
IS = 50 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb, c
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA
VDS = 5.0 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 3.0 V, RL = 100 W
ID = 0.25 A, VGEN = 4.5 V, RG = 10 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min Typ Max Unit
20 24
V
0.4 0.9 1.5
"2
0.001
"100
100
nA
5 mA
120 160
400 800
mA
1.6 2.5
W
1.2 2.0
200 mS
0.7 1.2 V
350 450
25 pC
100
20
14 pF
5
7 12
25 35
ns
19 30
9 15
VNOJ
www.vishay.com
11-2
Document Number: 70868
S-04279Rev. B, 16-Jul-01


Part Number TN0205AD
Description N-Channel 20-V MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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