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Vishay Intertechnology Electronic Components Datasheet

TSFF5210 Datasheet

High Speed Infrared Emitting Diode

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TSFF5210 pdf
TSFF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
Description
TSFF5210 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
www.DataSheet4U.com
94 8390
Features
• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant
intensity
• Low forward voltage
e2
• Suitable for high pulse current operation
• Standard T-1¾ (5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λp = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared video data transmission between Cam-
corder and TV set.
• Free air data transmission systems with high
modulation frequencies or high data transmission
rate requirements.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t 5 sec, 2 mm from case
Thermal resistance junction/
ambient
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1
250
100
- 40 to + 85
- 40 to + 100
260
300
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81090
Rev. 1.5, 28-Nov-06
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

TSFF5210 Datasheet

High Speed Infrared Emitting Diode

No Preview Available !

TSFF5210 pdf
TSFF5210
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Temp. coefficient of VF
Reverse current
Junction capacitance
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
Symbol
VF
VF
TKVF
IR
Cj
Optical Characteristics
www.DataShTeametb4=U.2c5om°C, unless otherwise specified
Parameter
Test condition
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Temp. coefficient of φe
IF = 100 mA
Angle of half intensity
Peak wavelength
IF = 100 mA
Spectral bandwidth
IF = 100 mA
Temp. coefficient of λp
IF = 100 mA
Rise time
IF = 100 mA
Fall time
IF = 100 mA
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
Virtual source diameter
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Ie
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tf
fc
Min
Min
90
Typ.
1.5
2.3
- 2.1
125
Typ.
180
1800
50
- 0.35
± 10
870
40
0.25
15
15
23
3.7
Max Unit
1.8 V
3.0 V
mV/K
10 µA
pF
Max Unit
450 mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
300
250
200
150
R
thJA
100
50
0
0
16647
10 20 30 40 50 60 70 80 90 100
T - Ambient Temperature (°C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
200
175
150
125
100
75 R
thJA
50
25
0
0 10 20 30 40 50 60 70 80 90 100
16964
T - Ambient Temperature (°C)
amb
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 81090
Rev. 1.5, 28-Nov-06


Part Number TSFF5210
Description High Speed Infrared Emitting Diode
Maker Vishay Siliconix
Total Page 6 Pages
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