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Vishay Intertechnology Electronic Components Datasheet

1N4732A Datasheet

Silicon Power Z-Diodes

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1N4732A pdf
Silicon Power Z–Diodes
Features
D Very sharp reverse characteristic
D Very high stability
D Low reverse current level
D VZ–tolerance ± 5%
1N4728A...1N4761A
Vishay Telefunken
Applications
Voltage stabilization
94 9369
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
xTest Conditions
Tamb 50°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
1
PV/VZ
200
–65...+200
Unit
W
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=9.5mm (3/8”), TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol
RthJA
Value
100
Unit
K/W
Symbol Min Typ Max Unit
VF 1.2 V
Document Number 85587
Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)


Vishay Intertechnology Electronic Components Datasheet

1N4732A Datasheet

Silicon Power Z-Diodes

No Preview Available !

1N4732A pdf
1N4728A...1N4761A
Vishay Telefunken
Type
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
VZnom 1)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
IZT
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
for
rzjT
< 10
< 10
<9
<9
<8
<7
<5
<2
< 3.5
< 4.0
< 4.5
< 5.0
<7
<8
<9
< 10
< 14
< 16
< 20
< 22
< 23
< 25
< 35
< 40
< 45
< 50
< 60
< 70
< 80
< 95
< 110
< 125
< 150
< 175
rzjk at
< 400
< 400
< 400
< 400
< 500
< 550
< 600
< 700
< 700
< 700
< 700
< 700
< 700
< 700
< 700
< 100
< 700
< 700
< 750
< 750
< 750
< 750
< 750
< 1000
< 1000
< 1000
< 1000
< 1500
< 1500
< 1500
< 2000
< 2000
< 2000
< 2000
IZK
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0,25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1) Based on dc–measurement at thermal equilibrium while maintaining the
lead temperature (TL) at 30°C + 1°C, 9.5mm (3/8”) from the diode body.
IR at
< 100
< 100
< 50
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
<5
VR
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 85587
Rev. 2, 01-Apr-99


Part Number 1N4732A
Description Silicon Power Z-Diodes
Maker Vishay Telefunken
Total Page 4 Pages
PDF Download
1N4732A pdf
Download PDF File
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