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Weitron Technology
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MPSA44 Datasheet Preview

MPSA44 Datasheet

High-Voltage NPN Transistors

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MPSA44 pdf
High-Voltage NPN Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstgwww.DataSheet4U.com
MPSA44
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
Value
400
400
5.0
200
0.625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCE= 400 Vdc, IB=0)
Collector Cutoff Current (VCB= 400 Vdc, IE=0)
Emitter Cutoff Current (VEB= 4.0Vdc, IC=0)
Symbol Min Max Unit
V(BR)CEO
400
-
Vdc
V(BR)CBO
V(BR)EBO
400
5.0
-
-
ICE0 - 5.0
Vdc
Vdc
uAdc
ICBO
- 0.1
uAdc
IEBO
- 0.1
uAdc
WEITRON
http://www.weitron.com.tw



Weitron Technology
Weitron Technology

MPSA44 Datasheet Preview

MPSA44 Datasheet

High-Voltage NPN Transistors

No Preview Available !

MPSA44 pdf
MPSA44
WE ITR ON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max Unit
On Characteristics
DC Current Gain
(IC= 1.0 mAdc, VCE=10Vdc)
(IC= 10 mAdc, VCE= 10Vdc)
(IC= 100 mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)
Base-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f=30MHz)
HFE(1)
HFE(2)
HFE(3)
VCE(sat)
VBE(sat)
fT
70
80
60
-
-
-
50
--
300 -
.-
0.2 Vdc
0.3
0.75 Vdc
- MHz
WEITRON
http://www.weitron.com.tw


Part Number MPSA44
Description High-Voltage NPN Transistors
Maker Weitron Technology
Total Page 4 Pages
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