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Westcode Semiconductors
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R0830LS12E Datasheet Preview

R0830LS12E Datasheet

Distributed Gate Thyristor

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R0830LS12E pdf
WESTCODE
Date:- 2 Apr, 2001
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R0830LS12x to R0830LS14x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200-1400
1200-1400
1200-1400
1300-1500
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
830
528
289
1713
1318
8500
9350
361×103
437×103
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1
Page 1 of 12
April, 2001



Westcode Semiconductors
Westcode Semiconductors

R0830LS12E Datasheet Preview

R0830LS12E Datasheet

Distributed Gate Thyristor

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R0830LS12E pdf
WESTCODE Positive development in power electronics
Characteristics
R0830LS12x to R0830LS14x
VTM
V0
rs
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgt
tgd
Qrr
Qra
Irr
trr
PARAMETER
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
tq Turn-off time (note 2)
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
25
-
-
10
-
TYP.
-
-
-
-
-
-
-
-
-
0.4
0.8
285
110
95
2.7
-
-
-
-
-
340
MAX. TEST CONDITIONS (Note 1)
2.4 ITM=1400A
1.9
0.357
- VD=80% VDRM, linear ramp
70 Rated VDRM
70 Rated VRRM
3.0
Tj=25°C
300
VD=10V, IT=3A
1000 Tj=25°C
1.0 VD=67% VDRM, IT=1500A, di/dt=60A/µs,
2.0 IFG=2A, tr=0.5µs, Tj=25°C
-
130 ITM=1000A, tp=1000µs, di/dt=60A/µs,
- Vr=50V
-
30
35
0.032
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
Double side cooled
0.064 Single side cooled
20
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Data Sheet. Types R0830LS12x to R0830LS14x Issue 1
Page 2 of 12
April, 2001


Part Number R0830LS12E
Description Distributed Gate Thyristor
Maker Westcode Semiconductors
Total Page 12 Pages
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