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Winsem Technology
Winsem Technology

WTBV45M Datasheet Preview

WTBV45M Datasheet

POWER TRANSISTOR

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WTBV45M pdf
Winsem Technology Corp.
High Voltage NPN Transistor
WTBV45 / WTBV45M
POWER TRANSISTOR
TO-92
Pin Definition
1. Emitter
2. Collector
3. Base
TO-126
Pin Definition
1. Emitter
2. Collector
3. Base
Features
• High Voltage
• Very High Switch Speed
• BVCEO : 400V
• BVCBO : 700V
• IC : 0.75A
• VCE(SAT) : 1.5V@Ic / IB=200mA/ 20mA
• Silicon Triple Diffused Type
Application
• Electronic Ballasts
• Adapter
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Total Power Dissipation(TO92)
Total Power Dissipation(TO126)
Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
TJ
TSTG
Version A11
Max Rating
700
400
9
0.75
1.5
1.5
20
150
-55 ~ +150
Unit
V
V
V
A
A
W
Page 1



Winsem Technology
Winsem Technology

WTBV45M Datasheet Preview

WTBV45M Datasheet

POWER TRANSISTOR

No Preview Available !

WTBV45M pdf
Winsem Technology Corp.
WTBV45 / WTBV45M
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
IC = 1mA, IB=0
IC = 1mA, IE=0
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
Collector Cutoff Current
ICBO VCB = 700V, IE=0
Emitter Cutoff Current
IEBO VEB = 7V, IC=0
hFE1 VCE = 10V, IC=10mA
DC Current Gain
hFE2 VCE = 10V, IC=100mA
hFE3 VCE = 10V, IC=280mA
VCE(SAT1) IC/IB = 50mA / 10mA
Collector-Emitter Saturation Voltage VCE(SAT2) IC/IB = 1000mA / 10mA
VCE(SAT3) IC/IB = 200mA / 20mA
Base-Emitter Saturation Voltage
VBE(SAT1) IC/IB = 50mA / 10mA
VBE(SAT2) IC/IB = 100mA / 10mA
Min
700
400
9
15
25
12
Typ
0.2
0.45
1
Max
1
1
40
40
24
0.4
1
1.5
1
1.2
Unit
V
V
V
V
V
Dynamic
Frequency
Output Capacitance
fT VCE=10V, IC=0.1A
Cob VCB=10V, f=01.MHz
4─
─ MHz
─ 21 ─ pF
Resistive Load Switching Time (Ratings)
Rise Time
tr
Storage Time
tSTG
Fall Time
tf
Vcc=125V, IC=100mA,
IB1 = IB2 = 20mA,
tp = 25uS
Duty Cycle ≦ 1%
1.1 ─
24
0.2 0.7
uS
uS
uS
Version A11
Page 2


Part Number WTBV45M
Description POWER TRANSISTOR
Maker Winsem Technology
Total Page 5 Pages
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