http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Winsem Technology
Winsem Technology

WTBV46 Datasheet Preview

WTBV46 Datasheet

POWER TRANSISTOR

No Preview Available !

WTBV46 pdf
Winsem Technology Corp.
High Voltage NPN Transistor
WTBV46 / WTBV46M
POWER TRANSISTOR
TO-92
Pin Definition
1. Emitter
2. Collector
3. Base
TO-126
Pin Definition
1. Emitter
2. Collector
3. Base
Features
• High Voltage
• Very High Switch Speed
• BVCEO : 400V
• BVCBO : 800V
• IC : 1.5A
• VCE(SAT) : 2V@Ic / IB=800mA/ 200mA
• Silicon Triple Diffused Type
Application
• Electronic Ballasts
• Adapter
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collect-Break Down Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Total Power Dissipation(TO92)
Total Power Dissipation(TO126)
Junction Temperature
Operating Junction and Storage Temperature Range
Version A13
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
PD
TJ
TSTG
Rating
800
800
400
9
1.5
2
1.5
20
150
-55 ~ +150
Unit
V
V
V
V
A
A
W
Page 1



Winsem Technology
Winsem Technology

WTBV46 Datasheet Preview

WTBV46 Datasheet

POWER TRANSISTOR

No Preview Available !

WTBV46 pdf
Winsem Technology Corp.
WTBV46 / WTBV46M
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Min Typ Max Unit
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
IC = 1mA, IB=0
IC = 1mA, IE=0
800 ─
400 ─
V
V
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
9─
V
Collector Cutoff Current
ICBO VCB = 700V, IE=0
──
1㎂
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
──
1㎂
hFE1 VCE = 10V, IC=10mA 20 ─
DC Current Gain
hFE2 VCE = 10V, IC=100mA 25
45
hFE3 VCE = 10V, IC=280mA 20
VCE(SAT1) IC/IB = 50mA / 10mA ─ ─ 0.5
Collector-Emitter Saturation Voltage VCE(SAT2) IC/IB = 100mA / 10mA
1
V
VCE(SAT3) IC/IB = 200mA / 20mA
3
Base-Emitter Saturation Voltage
VBE(SAT1) IC/IB = 50mA / 10mA
VBE(SAT2) IC/IB = 100mA / 10mA
─ 1.15
V
─ 1.25
Dynamic
Frequency
Output Capacitance
fT VCE=10V, IC=0.1A
Cob VCB=10V, f=01.MHz
4─
─ MHz
─ 21 ─ pF
Resistive Load Switching Time (Ratings)
Rise Time
tr
Storage Time
tSTG
Fall Time
tf
Vcc=125V, IC=100mA,
IB1 = IB2 = 20mA,
tp = 25uS
Duty Cycle ≦ 1%
─2
56
0.2 0.7
uS
uS
uS
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance (TO92)
Junction to Ambient Thermal Resistance (TO126)
Symbol
RΘJA
Limit
122
90
Unit
℃/W
Version A13
Page 2


Part Number WTBV46
Description POWER TRANSISTOR
Maker Winsem Technology
Total Page 5 Pages
PDF Download
WTBV46 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 WTBV45 POWER TRANSISTOR Winsem Technology
Winsem Technology
WTBV45 pdf
2 WTBV45M POWER TRANSISTOR Winsem Technology
Winsem Technology
WTBV45M pdf
3 WTBV46 POWER TRANSISTOR Winsem Technology
Winsem Technology
WTBV46 pdf
4 WTBV46M POWER TRANSISTOR Winsem Technology
Winsem Technology
WTBV46M pdf
5 WTBV49L POWER TRANSISTOR Winsem Technology
Winsem Technology
WTBV49L pdf
6 WTBV49L POWER TRANSISTOR Winsem Technology
Winsem Technology
WTBV49L pdf
7 WTBV49SL POWER TRANSISTOR Winsem Technology
Winsem Technology
WTBV49SL pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components