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Winsem Technology
Winsem Technology

WTBV49L Datasheet Preview

WTBV49L Datasheet

POWER TRANSISTOR

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WTBV49L pdf
Winsem Technology Corp.
High Voltage NPN Transistor
WTBV49L / WTI49
POWER TRANSISTOR
TO-92
Pin Definition
1. Emitter
2. Collector
3. Base
Features
• High Voltage
• High Switch Speed
• BVCEO : 530V
• BVCBO : 900V
• IC : 1.5A
• VCE(SAT) : 0.5V@Ic / IB=0.5A / 0.1A
• Silicon Triple Diffused Type
Application
• Electronic Ballasts
• Adapter
• Charger
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Total Power Dissipation(TO92)
Total Power Dissipation(TO251)
Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
Ptot
TJ
TSTG
Version A09
Max Rating
900
530
10
1.5
3
1.96
30
150
-55 ~ +150
Unit
V
V
V
A
A
W
Page 1



Winsem Technology
Winsem Technology

WTBV49L Datasheet Preview

WTBV49L Datasheet

POWER TRANSISTOR

No Preview Available !

WTBV49L pdf
Winsem Technology Corp.
WTBV49L / WTI49
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cutoff Current
BVCBO
BVCEO
BVEBO
ICBO
IC = 1mA, IB=0
IC = 10mA, IE=0
IE = 1mA, IC=0
VCB = 800V, IE=0
Emitter Cutoff Current
IEBO
hFE1
VEB = 10V, IC=0
VCE = 5V, IC=1mA
DC Current Gain
hFE2 VCE = 5V, IC=400mA
hFE3 VCE = 5V, IC=1A
Collector-Emitter Saturation Voltage
VCE(SAT1) IC/IB = 0.5A / 0.1A
VCE(SAT2) IC/IB = 1.0A / 0.25A
VCE(SAT3) IC/IB = 1.5A / 0.5A
Base-Emitter Saturation Voltage
VBE(SAT1) IC/IB = 0.5A / 0.1A
VBE(SAT2) IC/IB = 1.0A / 0.25A
Min Typ Max Unit
900 ─
530 ─
9─
──
─V
─V
─V
10 ㎂
──
15 ─
20 ─
0.5 ㎂
40
40
6 ─ 40
─ 0.3 0.5
─ 0.5 1
─ 0.9 2
──
1
─ ─ 1.2
V
V
Dynamic
Frequency
Output Capacitance
fT VCE=10V, IC=0.1A
Cob VCB=10V, f=01.MHz
4
──
21 ─
MHz
pF
Resistive Load Switching Time (Ratings)
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
tSTG
tf
Vcc=125V, IC=1A,
IB1=IB2=0.2A,
tp=25uS
Duty Cycle ≦ 1%
*Note:pulse test: pulse width ≦ 300uS, duty cycle ≦ 2%
─ 0.05 0.2 uS
─ 1.1 ─
uS
─ 2 4 uS
0.4 0.7
uS
Version A11
Page 2


Part Number WTBV49L
Description POWER TRANSISTOR
Maker Winsem Technology
Total Page 5 Pages
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