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Winsem Technology
Winsem Technology

WTI57D Datasheet Preview

WTI57D Datasheet

POWER TRANSISTOR

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WTI57D pdf
Winsem Technology Corp.
High Voltage NPN Transistor
Features
• High Voltage
• Very High Switch Speed
• BVCEO : 400V
• BVCBO : 800V
• IC : 4A
• Silicon Triple Diffused Type
WTI57D
POWER TRANSISTOR
Application
• Electronic Ballasts
• Adapter
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Total Power Dissipation(TO251)
Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
TJ
TSTG
Max Rating
800
400
9
4
8
35
150
-55 ~ +150
Unit
V
V
V
A
A
W
Version A12
Page 1



Winsem Technology
Winsem Technology

WTI57D Datasheet Preview

WTI57D Datasheet

POWER TRANSISTOR

No Preview Available !

WTI57D pdf
Winsem Technology Corp.
WTI57D
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cutoff Current
BVCBO
BVCEO
BVEBO
ICBO
IC = 1mA, IB=0
IC = 10mA, IE=0
IE = 1mA, IC=0
VCB = 700V, IE=0
Emitter Cutoff Current
IEBO
hFE1
VEB = 7V, IC=0
VCE = 5V, IC=500mA
DC Current Gain
hFE2 VCE = 5V, IC=1A
hFE3 VCE = 5V, IC=2A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT1) IC/IB = 0.5A / 0.1A
VCE(SAT2) IC/IB = 1A / 0.25A
VBE(SAT1) IC/IB = 0.5A / 0.1A
VBE(SAT2) IC/IB = 1A / 0.25A
Min Typ Max Unit
800 ─
400 ─
9─
──
─V
─V
─V
110 ㎂
─ ─ 225 ㎂
30 ─
20 ─
40
15 ─
─ ─ 0.7
V
──
1
─ ─ 1.3
V
─ ─ 1.5
Resistive Load Switching Time (Ratings)
Rise Time
Ton
Storage Time
tSTG
Fall Time
tf
Vcc=250V, IC=1A,
IB1 = IB2 = 0.2A,
tp = 25uS
Duty Cycle ≦ 1%
─ ─ 0.7 uS
─ 3.5 5 uS
0.2 0.6
uS
Version A12
Page 2


Part Number WTI57D
Description POWER TRANSISTOR
Maker Winsem Technology
Total Page 4 Pages
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