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EFS1J Datasheet Preview

EFS1J Datasheet

1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

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EFS1J pdf
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WTE
POWER SEMICONDUCTORS
EFS1J Pb
1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 30A Peak
! Low Power Loss
! Super-Fast Recovery Time
! Plastic Case Material has UL Flammability
A
B
F
Classification Rating 94V-O
C
HG
E
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
SMA/DO-214AC
Dim Min Max
A 2.50 2.90
B 4.00 4.60
C 1.20 1.60
D
0.152
0.305
E 4.80 5.28
F 2.00 2.44
G
0.051
0.203
H 0.76 1.52
All Dimensions in mm
D
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TL = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
@IF = 1.0A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
trr
Cj
RJL
Tj, TSTG
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
EFS1J
600
420
1.0
30
1.25
5.0
100
50
8
35
-65 to +150
Unit
V
V
A
A
V
µA
nS
pF
°C/W
°C
EFS1J
1 of 4
© 2006 Won-Top Electronics



Won-Top Electronics
Won-Top Electronics

EFS1J Datasheet Preview

EFS1J Datasheet

1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

No Preview Available !

EFS1J pdf
1.00
0.75
0.50
0.25
Single phase half wave
Resistive or Inductive load
0
0
30
25 50 75 100 125 150
TL, LEAD TEMPERATURE ( ° C)
Fig. 1 Forward Current Derating Curve
175
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
Tj = 25°C
10 Pulse width = 300µs
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
Tj = 25°C
f = 1.0MHz
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
EFS1J
2 of 4
© 2006 Won-Top Electronics


Part Number EFS1J
Description 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Maker Won-Top Electronics
Total Page 4 Pages
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