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Won-Top Electronics
Won-Top Electronics

UF5400 Datasheet Preview

UF5400 Datasheet

3.0A ULTRAFAST DIODE

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UF5400 pdf
WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
UF5400 – UF5408 Pb
3.0A ULTRAFAST DIODE
AB
A
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-201AD
Dim Min Max
A 25.4 —
B 7.20 9.50
C 1.20 1.30
D 4.80 5.30
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 3.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
UF
5400
50
UF
5401
100
UF
5402
200
UF
5403
300
UF
5404
400
UF
5406
600
UF
5407
800
UF
5408
1000
VR(RMS)
35
70 140 210 280 420 560 700
IO 3.0
IFSM
VFM
IRM
trr
Cj
Tj
TSTG
150
1.0
50
80
1.3
10
100
-65 to +125
-65 to +150
1.7
75
50
Unit
V
V
A
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
UF5400 – UF5408
1 of 4
© 2006 Won-Top Electronics



Won-Top Electronics
Won-Top Electronics

UF5400 Datasheet Preview

UF5400 Datasheet

3.0A ULTRAFAST DIODE

No Preview Available !

UF5400 pdf

4
3
Single phase half wave
Resistive or Inductive load
2
1
0
0
200
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
175
8.3ms single half
sine-wave
100
100
UF5400 - UF5403
10
1.0
UF5404
UF5406 - UF5408
0.1
0.01
0.6
1.0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
1.4 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
UF5400 - UF5404
UF5406 - UF5408
10
10
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
UF5400 – UF5408
2 of 4
© 2006 Won-Top Electronics


Part Number UF5400
Description 3.0A ULTRAFAST DIODE
Maker Won-Top Electronics
Total Page 4 Pages
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