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BFN39 Datasheet Preview

BFN39 Datasheet

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BFN39 pdf
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – JANUARY 1996 7
FEATURES:
* High VCEO=300V and low VCE(sat)
APPLICATIONS:
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BFN38
PARTMARKING DETAIL:- BFN39
BFN39
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-300 V
Collector-Emitter Voltage
VCEO
-300 V
Emitter-Base Voltage
VEBO
-5 V
Continuous Collector Current
IC
-500 mA
Power Dissipation at Tamb=25°C
Ptot
-2 W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-300
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-300
V IC=-1mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V IE=-100µA
Collector Cut-Off
Current
Emitter Cut-Off
Current
ICBO
IEBO
-100 nA
-20 µA
-100 nA
VCB=-250V
VCB=-250V †
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5 V
IC=-20mA, IB=-2mA*
Base Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA*
Static Forward
hFE
Current Transfer Ratio
Transition Frequency fT
25
40
30
100
MHz
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=10V*
IC=-20mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
2.5 pF VCB=-30V, f=1MHz
†Tamb =150°C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 49


Part Number BFN39
Description SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Maker Zetex Semiconductors
Total Page 1 Pages
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