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Zetex Semiconductors
Zetex Semiconductors

FXT690B Datasheet Preview

FXT690B Datasheet

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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FXT690B pdf
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
FXT690B
ISSUE 1 – MAY 94
FEATURES
* 45 Volt VCEO
* Gain of 400 at IC=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers
* Battery powered circuits
* Motor drivers
REFER TO ZTX690B FOR GRAPHS
B
C
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptotp
Ptot
45 V
45 V
5V
6A
2A
1.5 W
1W
5.7 mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 45
V IC=100µA
Collector-Emitter Breakdown V(BR)CEO
Voltage
45
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
0.1 µA VCB=35V
0.1 µA VEB=4V
0.1 V
0.5 V
IC=0.1A, IB=0.5mA*
IC=1A, IB=5mA*
0.9 V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9 V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE 500
400
150
IC=100mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
3-52



Zetex Semiconductors
Zetex Semiconductors

FXT690B Datasheet Preview

FXT690B Datasheet

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

No Preview Available !

FXT690B pdf
FXT690B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX.
Transition Frequency
fT 150
UNIT
MHz
Input Capacitance
Cibo
200 pF
Output Capacitance
Cobo
16 pF
Switching Times
ton
toff
33
1300
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
CONDITIONS.
IC=50mA, VCE=5V
f=50MHz
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=500mA, IB!=50mA
IB2=50mA, VCC=10V
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat steemtemppeerraattuurree
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
100
D=1 (D.C.)
t1 D=t1/tP
tP
D=0.5
0
0.0001
D=0.2
D=0.1
Single Pulse
0.001 0.01 0.1
1 10
Pulse Width (seconds)
100
Maximum transient thermal impedance
3-53


Part Number FXT690B
Description NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Maker Zetex Semiconductors
Total Page 2 Pages
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