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Zetex Semiconductors
Zetex Semiconductors

ZXTN07012EFF Datasheet Preview

ZXTN07012EFF Datasheet

NPN high gain power transistor

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ZXTN07012EFF pdf
ZXTN07012EFF
12V, SOT23F, NPN high gain power transistor
Summary
BVCEO > 12V
BVECO > 3V
IC(cont) = 4.5A
VCE(sat) < 70mV @ 1A
RCE(sat) = 43m
PD = 1.5W
Complementary part number ZXTP07012EFF
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Description
This low voltage NPN transistor has been designed for applications
requiring high gain and very low saturation voltage. The SOT23F
package is pin compatible with the industry standard SOT23 footprint
but offers lower profile and higher dissipation for applications where
power density is of utmost importance.
Features
• Low profile SOT23F package
• Low saturation voltage
• High gain
• High power dissipation
Applications
• LED driver
• Boost converter
• Logic interface
• Motor drive
Ordering information
Device
ZXTN07012EFFTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1D3
C
B
E
E
C
B
Pinout - top view
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com



Zetex Semiconductors
Zetex Semiconductors

ZXTN07012EFF Datasheet Preview

ZXTN07012EFF Datasheet

NPN high gain power transistor

No Preview Available !

ZXTN07012EFF pdf
ZXTN07012EFF
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(c)
Base current
Peak pulse current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Power dissipation at Tamb =25°C(c)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
20
12
3
7
4.5
1
10
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
- 55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
RJA
Limit
149
93
83
60
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com


Part Number ZXTN07012EFF
Description NPN high gain power transistor
Maker Zetex Semiconductors
Total Page 6 Pages
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ZXTN07012EFF pdf
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