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Zetex Semiconductors
Zetex Semiconductors

ZXTN25020DFL Datasheet Preview

ZXTN25020DFL Datasheet

NPN low power transistor

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ZXTN25020DFL pdf
ZXTN25020DFL
20V, SOT23, NPN low power transistor
Summary
BVCEX > 100V
BVCEO > 20V
BVECO > 5V
IC(cont) = 2A
ICM = 8A
VCE(sat) < 70mV @ 1A
RCE(sat) = 55m
PD = 350mW
Complementary part number ZXTP25020DFL
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Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
• High peak current
• Low saturation voltage
• 100V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC-DC conversion
• LED driving
• Interface between low voltage IC's and loads
Ordering information
Device
ZXTN25020DFLTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
1A1
C
B
E
E
C
B
Pinout - top view
Issue 4 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com



Zetex Semiconductors
Zetex Semiconductors

ZXTN25020DFL Datasheet Preview

ZXTN25020DFL Datasheet

NPN low power transistor

No Preview Available !

ZXTN25020DFL pdf
ZXTN25020DFL
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(a)
Base current
Peak pulse current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
PD
Tj, Tstg
Limit
100
100
20
5
7
2
500
8
350
Unit
V
V
V
V
V
A
mA
A
mW
2.8
-55 to 150
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Symbol
RJA
Limit
357
Unit
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 4 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com


Part Number ZXTN25020DFL
Description NPN low power transistor
Maker Zetex Semiconductors
Total Page 8 Pages
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