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Infineon Technologies Electronic Components Datasheet

SSB11N60C2 Datasheet

Power Transistor

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SSB11N60C2 pdf
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Final data
SPP11N60C2, SPB11N60C2
SPA11N60C2
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.38
ID 11
V
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type
SPP11N60C2
SPB11N60C2
SPA11N60C2
P-TO220-3-31
3
12
Package
Ordering Code
P-TO220-3-1 Q67040-S4295
P-TO263-3-2 Q67040-S4298
P-TO220-3-31 Q67040-S4332
Marking
11N60C2
11N60C2
11N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 11 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
11 111)
7 71)
ID puls
EAS
22
340
22
340
Unit
A
A
mJ
EAR 0.6 0.6
IAR 11 11 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
125 33 W
-55...+150
°C
2002-08-12


Infineon Technologies Electronic Components Datasheet

SSB11N60C2 Datasheet

Power Transistor

No Preview Available !

SSB11N60C2 pdf
www.DataSheet4U.com
Final data
SPP11N60C2, SPB11N60C2
SPA11N60C2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thremal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Linear derating factor
Linear derating factor, FullPAK
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
- - 1 K/W
- - 3.8
- - 62
- - 80
- - 62
- 35 -
- - 1 W/K
- - 0.26
- - 260 °C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
Drain-source avalanche breakdown voltage
VGS=0V, ID=11A
Gate threshold voltage, VGS = VDS
ID =0.5mA
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 150 °C
V(BR)DSS 600
-
V(BR)DS - 700
VGS(th) 3.5 4.5
IDSS
--
--
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=7A, Tj=25°C
Gate input resistance
f = 1 MHz, open drain
IGSS
RDS(on)
RG
--
- 0.34
- 0.86
-V
-
5.5
µA
25
250
100 nA
0.38
-
Page 2
2002-08-12


Part Number SSB11N60C2
Description Power Transistor
Manufacturer infineon
Total Page 14 Pages
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SSB11N60C2 pdf
SSB11N60C2 Datasheet PDF
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