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No Part Number Description Manufacture PDF
364 1SS104 SILICON PLANAR TYPE DIODE

Toshiba Semiconductor
Toshiba Semiconductor
1SS104 pdf
363 1SS106 Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient.
Hitachi Semiconductor
Hitachi Semiconductor
1SS106 pdf
362 1SS106 SILICON SCHOTTKY BARRIER DIODE

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal
SEMTECH
SEMTECH
1SS106 pdf
361 1SS106 Silicon Schottky Barrier Diode

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features • Detection efficiency is very good. • Smal
Renesas
Renesas
1SS106 pdf
360 1SS106 SMALL SIGNAL SCHOTTKY DIODES

R SEMICONDUCTOR 1SS106 SMALL SIGNAL SCHOTTKY DIODES FEATURES Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHON
JINAN JINGHENG ELECTRONICS
JINAN JINGHENG ELECTRONICS
1SS106 pdf
359 1SS108 Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High re
Hitachi Semiconductor
Hitachi Semiconductor
1SS108 pdf
358 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch

1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertio
Hitachi Semiconductor
Hitachi Semiconductor
1SS110 pdf
357 1SS110 Switching Diode

Switching Diode *150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requirements. 1SS110 Product Characteristic Absolute
Leshan Radio Company
Leshan Radio Company
1SS110 pdf
356 1SS118 Silicon Epitaxial Planar Diode

1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 (Z) Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass sea
Hitachi Semiconductor
Hitachi Semiconductor
1SS118 pdf
355 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching

1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • S
Hitachi Semiconductor
Hitachi Semiconductor
1SS119 pdf
354 1SS119 Silicon Epitaxial Planar Diode

1SS119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0564-0300 (Previous: ADE-208-180B) Rev.3.00 Mar 23, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery
Renesas
Renesas
1SS119 pdf
353 1SS120 Silicon Epitaxial Planar Diode for High Speed Switching

1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • S
Hitachi Semiconductor
Hitachi Semiconductor
1SS120 pdf


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