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2SK2 Datasheet Search

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No Part Number Description Manufacture PDF
968 2SK2000 Power MOSFET

Fuji Electric
Fuji Electric
2SK2000 pdf
967 2SK2000-R Power MOSFET

Fuji Electric
Fuji Electric
2SK2000-R pdf
966 2SK2001 (2SKxxxx) MOSFETs

Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/
Fuji Semiconductors
Fuji Semiconductors
2SK2001 pdf
965 2SK2002-01M N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2002-01M DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching
Inchange Semiconductor
Inchange Semiconductor
2SK2002-01M pdf
964 2SK2002-01MR N-channel MOS-FET

2SK2002-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 4,5
Fuji Electric
Fuji Electric
2SK2002-01MR pdf
963 2SK2003-01M N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2003-01M DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching
Inchange Semiconductor
Inchange Semiconductor
2SK2003-01M pdf
962 2SK2003-01MR N-channel MOS-FET

2SK2003-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 2,4
Fuji Electric
Fuji Electric
2SK2003-01MR pdf
961 2SK2004-01L N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,
Fuji Electric
Fuji Electric
2SK2004-01L pdf
960 2SK2004-01S N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,
Fuji Electric
Fuji Electric
2SK2004-01S pdf
959 2SK2007 Silicon N-Channel MOS FET

2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Swi
Hitachi Semiconductor
Hitachi Semiconductor
2SK2007 pdf
958 2SK2008 Silicon N-Channel MOS FET

2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Swi
Hitachi Semiconductor
Hitachi Semiconductor
2SK2008 pdf
957 2SK2009 N CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
2SK2009 pdf


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