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2SK2 Datasheet Search

2SK2 Datasheet

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No Part Number Description Manufacture PDF
937 2SK2000-R Power MOSFET

Fuji Electric
Fuji Electric
2SK2000-R pdf
936 2SK2002-01M N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2002-01M DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching
Inchange Semiconductor
Inchange Semiconductor
2SK2002-01M pdf
935 2SK2002-01MR N-channel MOS-FET

2SK2002-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 4,5
Fuji Electric
Fuji Electric
2SK2002-01MR pdf
934 2SK2003-01M N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2003-01M DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching
Inchange Semiconductor
Inchange Semiconductor
2SK2003-01M pdf
933 2SK2003-01MR N-channel MOS-FET

2SK2003-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 2,4
Fuji Electric
Fuji Electric
2SK2003-01MR pdf
932 2SK2004-01L N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,
Fuji Electric
Fuji Electric
2SK2004-01L pdf
931 2SK2004-01S N-channel MOS-FET

2SK2004-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,
Fuji Electric
Fuji Electric
2SK2004-01S pdf
930 2SK2007 Silicon N-Channel MOS FET

2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Swi
Hitachi Semiconductor
Hitachi Semiconductor
2SK2007 pdf
929 2SK2008 Silicon N-Channel MOS FET

2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Swi
Hitachi Semiconductor
Hitachi Semiconductor
2SK2008 pdf
928 2SK2009 N CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
2SK2009 pdf
927 2SK2010 N-Channel Silicon MOSFET

Ordering number:ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package
Sanyo Semicon Device
Sanyo Semicon Device
2SK2010 pdf
926 2SK2010 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulato
Inchange Semiconductor
Inchange Semiconductor
2SK2010 pdf



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