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No Part Number Description Manufacture PDF
15 FDT1600N10ALZ MOSFET

FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A •
Fairchild Semiconductor
Fairchild Semiconductor
FDT1600N10ALZ pdf
14 FDT3612 100V N-Channel PowerTrench MOSFET

FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using e
Fairchild Semiconductor
Fairchild Semiconductor
FDT3612 pdf
13 FDT3N40 MOSFET

FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Ty
Fairchild Semiconductor
Fairchild Semiconductor
FDT3N40 pdf
12 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrenc
Fairchild Semiconductor
Fairchild Semiconductor
FDT434P pdf
11 FDT439N N-Channel 2.5V Specified EnhancementMode Field Effect Transistor

FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Se
Fairchild Semiconductor
Fairchild Semiconductor
FDT439N pdf
10 FDT457N N-Channel Enhancement Mode Field Effect Transistor

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
Fairchild Semiconductor
Fairchild Semiconductor
FDT457N pdf
9 FDT458P 30V P-Channel PowerTrench MOSFET

FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using eith
Fairchild Semiconductor
Fairchild Semiconductor
FDT458P pdf
8 FDT459N N-Channel Enhancement Mode Field Effect Transistor

March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, h
Fairchild Semiconductor
Fairchild Semiconductor
FDT459N pdf
7 FDT461N N-Channel Logic Level PowerTrench MOSFET

FDT461N April 2004 FDT461N N-Channel Logic Level PowerTrench® MOSFET 100V, 0.4A, 2.5Ω Features • rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Qg(tot) = 2.36nC (Typ.), VGS = 10V • Low M
Fairchild Semiconductor
Fairchild Semiconductor
FDT461N pdf
6 FDT86102LZ MOSFET

FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A „ Max rDS(on) = 38
Fairchild Semiconductor
Fairchild Semiconductor
FDT86102LZ pdf
5 FDT86106LZ MOSFET

FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013 „ Max rDS(on) = 108 mΩ at VGS = 10 V, ID =
Fairchild Semiconductor
Fairchild Semiconductor
FDT86106LZ pdf
4 FDT86113LZ MOSFET

FDT86113LZ N-Channel PowerTrench® MOSFET March 2011 FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m: Features General Description „ Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A
Fairchild Semiconductor
Fairchild Semiconductor
FDT86113LZ pdf



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