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No Part Number Description Manufacture PDF
143 FQA10N80 800V N-Channel MOSFET

FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar s
Fairchild Semiconductor
Fairchild Semiconductor
FQA10N80 pdf
142 FQA10N80C 800V N-Channel MOSFET

FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss
Fairchild Semiconductor
Fairchild Semiconductor
FQA10N80C pdf
141 FQA10N80C_F109 N-Channel QFET MOSFET

FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ
Fairchild Semiconductor
Fairchild Semiconductor
FQA10N80C_F109 pdf
140 FQA11N40 400V N-Channel MOSFET

   QFET   $ $ $ $ $ $ %% &'())*+,) (&Ω-*,%)* .   / 01 2 ./ 0)2     %))3 !  4
Fairchild Semiconductor
Fairchild Semiconductor
FQA11N40 pdf
139 FQA11N90 900V N-Channel MOSFET

FQA11N90 September 2000 QFET FQA11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar s
Fairchild Semiconductor
Fairchild Semiconductor
FQA11N90 pdf
138 FQA11N90C 900V N-Channel MOSFET

FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss
Fairchild Semiconductor
Fairchild Semiconductor
FQA11N90C pdf
137 FQA11N90C_F109 MOSFET

FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge
Fairchild Semiconductor
Fairchild Semiconductor
FQA11N90C_F109 pdf
136 FQA11N90_F109 N-Channel QFET MOSFET

FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charg
Fairchild Semiconductor
Fairchild Semiconductor
FQA11N90_F109 pdf
135 FQA12N60 600V N-Channel MOSFET

FQA12N60 April 2000 QFET FQA12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip
Fairchild Semiconductor
Fairchild Semiconductor
FQA12N60 pdf
134 FQA12P20 200V P-Channel MOSFET

FQA12P20 May 2000 QFET FQA12P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
Fairchild Semiconductor
Fairchild Semiconductor
FQA12P20 pdf
133 FQA13N50 500V N-Channel MOSFET

   QFET   $ $ $ $ $ $ %& '()**+,-* '&Ω.+-%*+ /   0 ') 1 /0 2)1     %**3 !  4
Fairchild Semiconductor
Fairchild Semiconductor
FQA13N50 pdf
132 FQA13N50C 500V N-Channel MOSFET

FQA13N50C QFET FQA13N50C 500V N-Channel MOSFET General Description These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe,
Fairchild Semiconductor
Fairchild Semiconductor
FQA13N50C pdf


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