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No Part Number Description Manufacture PDF
4715 IRF-182xx Inductors

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Unifo
Vishay Intertechnology
Vishay Intertechnology
IRF-182xx pdf
4714 IRF-46 Inductors Epoxy Conformal Coated

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q
Vishay Siliconix
Vishay Siliconix
IRF-46 pdf
4713 IRF034 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF034   IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α
International Rectifier
International Rectifier
IRF034 pdf
4712 IRF034 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On
Inchange Semiconductor
Inchange Semiconductor
IRF034 pdf
4711 IRF044 N-CHANNEL POWER MOSFET

IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY S
Seme LAB
Seme LAB
IRF044 pdf
4710 IRF044 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF044 DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On
Inchange Semiconductor
Inchange Semiconductor
IRF044 pdf
4709 IRF044 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α  IRF044
International Rectifier
International Rectifier
IRF044 pdf
4708 IRF044SMD N-CHANNEL POWER MOSFET

LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF044SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 )
Seme LAB
Seme LAB
IRF044SMD pdf
4707 IRF054 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

PD - 90640 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A*  IRF054 60V, N-CHANNEL The HE
International Rectifier
International Rectifier
IRF054 pdf
4706 IRF054 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF054 DESCRIPTION ·Drain Current ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On
Inchange Semiconductor
Inchange Semiconductor
IRF054 pdf
4705 IRF054 Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-204AE

New Jersey Semiconductor
New Jersey Semiconductor
IRF054 pdf
4704 IRF054SMD N-CHANNEL POWER MOSFET

LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF054SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 )
Seme LAB
Seme LAB
IRF054SMD pdf



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