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No Part Number Description Manufacture PDF
45 IRFW450 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFW450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source
Inchange Semiconductor
Inchange Semiconductor
IRFW450 pdf
44 IRFW520A Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A D2-PAK 2 Lower Input Capacitance Imp
Fairchild Semiconductor
Fairchild Semiconductor
IRFW520A pdf
43 IRFW530A Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Imp
Fairchild Semiconductor
Fairchild Semiconductor
IRFW530A pdf
42 IRFW540A Advanced Power MOSFET

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperatu
Fairchild Semiconductor
Fairchild Semiconductor
IRFW540A pdf
41 IRFW550A (IRFI550A / IRFW550A) Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating T
Fairchild Semiconductor
Fairchild Semiconductor
IRFW550A pdf
40 IRFW610A Power MOSFET

     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDU
Samsung
Samsung
IRFW610A pdf
39 IRFW610B N-Channel MOSFET

IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr
Fairchild Semiconductor
Fairchild Semiconductor
IRFW610B pdf
38 IRFW614A Power MOSFET

$GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ L
Fairchild Semiconductor
Fairchild Semiconductor
IRFW614A pdf
37 IRFW614B N-Channel MOSFET

IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr
Fairchild Semiconductor
Fairchild Semiconductor
IRFW614B pdf
36 IRFW620A Power MOSFET

Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 1
Fairchild Semiconductor
Fairchild Semiconductor
IRFW620A pdf
35 IRFW620B N-Channel MOSFET

IRFW620B / IRFI620B November 2001 IRFW620B / IRFI620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr
Fairchild Semiconductor
Fairchild Semiconductor
IRFW620B pdf
34 IRFW624A Power MOSFET

$GYDQFHG 3RZHU 026)(7 IRFW/I624A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ L
Fairchild Semiconductor
Fairchild Semiconductor
IRFW624A pdf


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