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No Part Number Description Manufacture PDF
51 KTB1124 EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER/ ELECTRICAL EQUIPMENT)

KEC(Korea Electronics)
KEC(Korea Electronics)
KTB1124 pdf
50 KTB1124 EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed
KEC
KEC
KTB1124 pdf
49 KTB1151 EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

KEC(Korea Electronics)
KEC(Korea Electronics)
KTB1151 pdf
48 KTB1151 EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYM
KEC
KEC
KTB1151 pdf
47 KTB1234T EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting set
KEC
KEC
KTB1234T pdf
46 KTB1241 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

KEC(Korea Electronics)
KEC(Korea Electronics)
KTB1241 pdf
45 KTB1241 EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863. MAXIMUM RATING (Ta=25
KEC
KEC
KTB1241 pdf
44 KTB1260 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

KEC(Korea Electronics)
KEC(Korea Electronics)
KTB1260 pdf
43 KTB1260 EPITAXIAL PLANAR PNP TRANSISTOR

J B EQ SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTD1898. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SY
KEC
KEC
KTB1260 pdf
42 KTB1366 PNP Transistor

RoHS KTB1366 TO-220F KTB1366 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 2 W (Tamb=25℃) .,LCollector current ICM: -3 Collector-base voltage A OV(BR)CBO: -60 V Operating and storage
WEJ
WEJ
KTB1366 pdf
41 KTB1366 Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB1366 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC
Inchange Semiconductor
Inchange Semiconductor
KTB1366 pdf
40 KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Collector Power
KEC
KEC
KTB1366 pdf


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