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No Part Number Description Manufacture PDF
203 SI1000 (SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

SNAP–IN MOUNT ALUMINUM ELECTROLYTIC SI SERIES SUBMINIATURE (SI: Snap–in) The SI Snap–in series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring hi
NTE Electronics
NTE Electronics
SI1000 pdf
202 SI1002R N-Channel 30V (D-S) MOSFET

www.vishay.com N-Channel 30 V (D-S) MOSFET Si1002R Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V
Vishay
Vishay
SI1002R pdf
201 SI1010 (SI1010 - SI1015) Ultra Low Power ADC

Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta
Silicon Laboratories
Silicon Laboratories
SI1010 pdf
200 SI1011 (SI1010 - SI1015) Ultra Low Power ADC

Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta
Silicon Laboratories
Silicon Laboratories
SI1011 pdf
199 SI1012 (SI1010 - SI1015) Ultra Low Power ADC

Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta
Silicon Laboratories
Silicon Laboratories
SI1012 pdf
198 SI1012CR N-Channel 20 V (D-S) MOSFET

www.DataSheet.co.kr Si1012CR Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V ID (A) 0.5 0.2 0.2
Vishay Siliconix
Vishay Siliconix
SI1012CR pdf
197 SI1012R N-Channel 1.8-V (G-S) MOSFET

Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V ID (mA) 600 500 350 FEATURES D D
Vishay Siliconix
Vishay Siliconix
SI1012R pdf
196 SI1012X N-Channel 1.8-V (G-S) MOSFET

Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V ID (mA) 600 500 350 FEATURES D D
Vishay Siliconix
Vishay Siliconix
SI1012X pdf
195 SI1013 (SI1010 - SI1015) Ultra Low Power ADC

Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta
Silicon Laboratories
Silicon Laboratories
SI1013 pdf
194 SI1013R P-Channel 1.8-V (G-S) MOSFET

Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V ID (mA) –350 –300
Vishay Siliconix
Vishay Siliconix
SI1013R pdf
193 SI1013X P-Channel 1.8-V (G-S) MOSFET

Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V ID (mA) –350 –300
Vishay Siliconix
Vishay Siliconix
SI1013X pdf
192 SI1014 (SI1010 - SI1015) Ultra Low Power ADC

Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; reta
Silicon Laboratories
Silicon Laboratories
SI1014 pdf


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