| Part Number | Description |
|---|---|
| RFM10N15 | (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| RFP10N12 | (RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| RFP10N15L | (RFP10N12L / RFP10N15L) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| IRFF111 | (IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
| IRFF113 | (IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
| C106E | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| RFP5P15 | (RFP5P12 / RFP5P15) P-channel enhancement-mode power field-effect transistor |
| IRFF112 | (IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
| IRFF123 | N-Channel MOSFET |
| IRFD112 | (IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR |
| 2N3391A | (2N3390 - 2N3394) SILICON TRANSISTORS |
| C106M | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| 2N5365 | (2N5365 / 2N5366) SILICON TRANSISTORS |
| 2N5366 | (2N5365 / 2N5366) SILICON TRANSISTORS |
| T2301 | (T2300 - T2302) 2.5-A sensitive-gate silicon triac |
| RFP5P12 | (RFP5P12 / RFP5P15) P-channel enhancement-mode power field-effect transistor |
| RFM10N12 | (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| IRFF122 | N-Channel MOSFET |
| IRFD113 | (IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR |
| CA311 | Single/Quad Types Comparators |
| 3N204 | (3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors |
| 3N205 | (3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors |
| GES5814 | (GES5814 - GES5819) Signal Transistors |
| GES5815 | (GES5814 - GES5819) Signal Transistors |
| GES5816 | (GES5814 - GES5819) Signal Transistors |
| GES5817 | (GES5814 - GES5819) Signal Transistors |
| 2N3390 | (2N3390 - 2N3394) SILICON TRANSISTORS |
| 2N3394 | (2N3390 - 2N3394) SILICON TRANSISTORS |
| C106D | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| C106A | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| C106B | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| C106C | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| C106S | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| GEPS2001 | PROTON COUPLED ISOLATOR |
| CA3138 | High-current / high-beta N-P-N transistor array |
| CA3138A | High-current / high-beta N-P-N transistor array |
| RCA1B04 | SILICON TRANSISTORS |
| RCA1B05 | SILICON TRANSISTORS |
| RFM10P12 | (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| RFM10P15 | (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| RFP10N12L | (RFP10N12L / RFP10N15L) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| IRFF110 | (IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
| IRFF121 | N-Channel MOSFET |
| IRFF120 | N-Channel MOSFET |
| MAC15A | Silicon Triacs |
| 3N206 | (3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors |
| GES5818 | (GES5814 - GES5819) Signal Transistors |
| GES5819 | (GES5814 - GES5819) Signal Transistors |
| 2N3392 | (2N3390 - 2N3394) SILICON TRANSISTORS |
| 2N3393 | (2N3390 - 2N3394) SILICON TRANSISTORS |
| C106F | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| C106N | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| RFP10P12 | (RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
| RFM10P12 | (RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
| RFM10P15 | (RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
| T2302B | (T2300 - T2302) 2.5-A sensitive-gate silicon triac |
| T2302 | (T2300 - T2302) 2.5-A sensitive-gate silicon triac |
| T2300 | (T2300 - T2302) 2.5-A sensitive-gate silicon triac |
| CNY32 | PHOTON COUPLED ISOLATOR |
| RFP10N15 | (RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
| C106 | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| MAC15 | Silicon Triacs |
| 2N3391 | (2N3390 - 2N3394) SILICON TRANSISTORS |
| RFP10P15 | (RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
