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TSM4886 - 30V N-Channel MOSFET

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4886
Manufacturer 30V N-Channel MOSFET
File Size 212.04 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet TSM4886 Datasheet

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Preliminary www.DataSheet4U.com TSM4886 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 10 @ VGS = 10V 13.5 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 13 11 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch Ordering Information Part No. TSM4886CS RL Package SOP-8 Packing 2.