AVR201628 Overview
DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X.
AVR201628 Key Features
- VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-patible)
- Differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture
- Duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK
- 8 internal banks for concurrent operation
- Programmable CAS latency (CL)
- Posted CAS additive latency (AL)
- WRITE latency = READ latency