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5SDD0120C0200 Datasheet Preview

5SDD0120C0200 Datasheet

Rectifier Diode

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VRRM =
200 V
IFAVM = 11000 A
IFRMS = 17300 A
IFSM = 85000 A
VF0 =
0.75 V
rF = 0.020 m
Rectifier Diode
5SDD 0120C0200
Doc. No. 5SYA1157-01 July 06
Optimized for high current rectifiers
Very low on-state voltage
Very low thermal resistance
Blocking
VRRM
VRSM
IRRM
Repetitive peak reverse voltage
Maximum peak reverse voltage
Repetitive peak reverse current
200 V
300 V
50 mA
Half sine wave, tP = 10 ms, f = 50 Hz
Half sine wave, tP = 10 ms
Tj = 170 °C
VR = VRRM
Mechanical
FM Mounting force
min.
max.
a Acceleration:
Device unclamped
Device clamped
m Weight
DS Surface creepage distance
Da Air strike distance
35 kN
40 kN
50 m/s2
200 m/s2
0.22 kg
4 mm
4 mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




ABB

5SDD0120C0200 Datasheet Preview

5SDD0120C0200 Datasheet

Rectifier Diode

No Preview Available !

www.DataSheet4U.com
5SDD 0120C0200
On-state
IFAVM
IFRMS
IFSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive surge current
I2dt Max. surge current integral
VF max
VF0
rF
Maximum on-state voltage
Threshold voltage
Slope resistance
11000 A
17300 A
Half sine wave, Tc = 85 °C
85000 A tp =
10 ms Before surge
92500 A tp =
36100 kA2s tp =
8.3 ms Tj = 170 °C
10 ms After surge:
35700 kA2s tp =
0.92 V IF =
8.3 ms VR 0V
8000 A Tj = 170 °C
0.75 V Approximation for Tj = 170 °C
0.020 mIF = 8 - 18 kA
Thermal characteristics
Tj
Tstg
Rth(j-c)
Operating junction temperature range
Storage temperature range
Thermal resistance
junction to case
Rth(c-h) Thermal resistance
case to heatsink
-40...170 °C
-40…170 °C
12 K/kW Anode side cooled
12 K/kW Cathode side cooled
6 K/kW Double side cooled FM = 35…40 kN
6 K/kW Single side cooled
3 K/kW Double side cooled
ZthJC [K/kW]
8
Double sided cooling
6
4
2
0
10-3
10-2
Fm = 35...40 kN
4
Z th (j-c )(t) =
R i(1 - e - t /τ i )
i=1
i 1234
Ri (K/kW) 3.37
1.50
0.63
0.67
τi (s) 0.095 0.048 0.0035 0.001
FM = 35…40 kN
Double side cooled
10-1 t [s] 100
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 4
Doc. No. 5SYA1157-01 July 06


Part Number 5SDD0120C0200
Description Rectifier Diode
Maker ABB
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