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5SDD38H5000 Datasheet Preview

5SDD38H5000 Datasheet

Rectifier Diode

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VRSM =
IF(AV)M =
IF(RMS) =
IFSM =
VF0 =
rF =
5000 V
3810 A
5990 A
45×103 A
0.903 V
0.136 m
Rectifier Diode
5SDD 38H5000
Optimum power handling capability
Very low on-state losses
Doc. No. 5SYA1177-00 Feb. 06
www.DataSheet4U.com
Blocking
Maximum rated values Note 1
Parameter
Symbol Conditions
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Characteristic values
Parameter
VRRM
VRSM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
f = 50 Hz, tp = 10ms, Tj = -40...160°C
Symbol Conditions
min typ
Max. (reverse) leakage current
IRRM
Derating factor of 0.13% per °C is applicable for Tj below 0 °C.
VRRM, Tj = 160°C
Mechanical data
Maximum rated values Note 1
Parameter
Symbol Conditions
min typ
Mounting force
Acceleration
FM
a Device unclamped
45 50
Acceleration
a Device clamped
Value
5000
5000
Unit
V
V
max Unit
110 mA
max
55
50
100
Unit
kN
m/s2
m/s2
Characteristic values
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H FM = 50 kN, Ta = 25 °C
DS
Da
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
min
25.5
40
20
typ
0.9
max
26.5
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




ABB

5SDD38H5000 Datasheet Preview

5SDD38H5000 Datasheet

Rectifier Diode

No Preview Available !

On-state
Maximum rated values Note 1
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M 50 Hz, Half sine wave, TC = 85 °C
Max. RMS on-state current IF(RMS)
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 10 ms, Tj = 160°C,
VR = 0 V
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
www.DataSheeCt4hUa.craomcteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
VF IF = 4000 A, Tj = 160°C
V(T0)
rT
Tj = 160°C
IT = 6000...18000 A
5SDD 38H5000
min typ max Unit
3810 A
5990 A
45×103 A
9.6×106 A2s
48×103 A
10.1×106 A2s
min typ max Unit
1.43 V
0.903 V
0.136 m
Switching
Characteristic values
Parameter
Recovery charge
Symbol Conditions
Qrr diF/dt = -30 A/µs, VR = 100 V
IFRM = 2000 A, Tj = 160°C
min typ max Unit
9000
µAs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1177-00 Feb. 06
page 2 of 6


Part Number 5SDD38H5000
Description Rectifier Diode
Maker ABB
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5SDD38H5000 Datasheet PDF





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