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AK532256AW - 262144 Word by 32 Bit CMOS Dynamic Random Access Memory

Datasheet Summary

Description

The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words.

The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ packages.

Features

  • 262,144 x 32 bit organization.
  • 72 pad Single In-Line Module.
  • CAS-before-RAS, RAS-only or hidden refresh.
  • Operating free air temperature 0oC to 70oC.
  • Single 5 Volt Power Supply.
  • 1024 Refresh Cycles, 16 mSEC.
  • Available in Fast Page Mode.
  • Power: 2.090 Watt Max Active (50 nS) 1.870 Watt Max Active (60 nS) 1.760 Watt Max Active (70 nS) 22 mW Max Standby.
  • Available in Fast Page Mode or EDO.
  • Upward compatible with AK532512W, AK5321024W, AK5322048W, AK5.

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Datasheet preview – AK532256AW

Datasheet Details

Part number AK532256AW
Manufacturer ACCUTEK
File Size 130.06 KB
Description 262144 Word by 32 Bit CMOS Dynamic Random Access Memory
Datasheet download datasheet AK532256AW Datasheet
Additional preview pages of the AK532256AW datasheet.

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Other Datasheets by ACCUTEK
  • AK532256W - 262144 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5322048 - 2097152 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5322048BW - 2097152 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5322048N - 2097152 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5321024N - 1048576 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5321024W - 1048576 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK5324096W - 4194304 Word by 32 Bit CMOS Dynamic Random Access Memory
  • AK532512W - 524288 Word by 32 Bit CMOS Dynamic Random Access Memory

Full PDF Text Transcription

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MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The module consists of two standard 256K x 16 bits DRAMs in plastic SOJ packages. The assembly has 2 DRAMs mounted on the front side of a printed circuit board in a 72 pad leadless SIM configuration. This configuration allows socket-mounting of large quantities of memory in applications where high density and ease of inserting additional memory are important. The operation of the AK532256AW is identical to eight 256K x 4 Drams. There are four CAS lines and two RAS lines. On each bank of 256K x 32, independent byte control is accomplished by four CAS lines. Each seperate CAS line controls one byte of the 256K x 16 Dram.
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