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* -20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A, RDS(ON).

P-Channel Enhancement Mode MOSFET The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.

ACE3400

ACE3401

ACE3401D

ACE345

ACE3000

ACE3000T

ACE301

ACE302

ACE303

ACE3600

ACE3926E

ACE-3600

ACE-716