ACE7401B Datasheet P-Channel Enhancement Mode Field Effect Transistor

Manufacturer: ACE Technology

Datasheet Details

Part number	ACE7401B
Manufacturer	ACE Technology
File Size	598.71 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Download	ACE7401B Download (PDF)

The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

ACE7401B P-Channel Enhancement Mode Field Effect Transistor.

VDS(V)=-30V.
ID=-29A (VGS=-10V).
RDS(ON)＜13mΩ (VGS=-20V).
RDS(ON)＜14mΩ (VGS=-10V).
RDS(ON)＜17mΩ (VGS=-5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) TA=25 OC TA=100 OC Drain Current (Pulse)C Drain Current (Continuous) TA=25 OC TA=75 OC Power Dissipation B TA=25 OC TA=100 OC Power Dissipation A TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDSS -30 V VGSS ±25 V -29 ID.

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